Speakers

 

  • Tomasz Sochacki - Institute of High Pressure Physics, Poland - "Growth-mode-induced defects in bulk GaN crystals"

  • Heiji Watanabe - The University of Osaka, Japan - "Interface Engineering of GaN-based Metal-Oxide-Semiconductor Devices"

  • Vanya Darakchieva - Lund University, Sweden - "AIN as a Functional Platform for III-N HEMTs: Growth, Interfaces, and Thermal Transport"

  • Masataka Higashiwaki - Osaka Metropolian University, Japan - "Nitrogen doping engineering for Ga2O3 devices"

  • Spyridon Pavlidis - North Carolina State University, USA

  • Andrew Allerman - Sandia, USA - "Ultra-wide Bandgap AIGaN Alloys for RF Transistors"

  • Pierre-Marie Coulon - CRHEA-CNRS, France - "Crack-Free AlGaN on GaN: How Compliant Microdisks Enable High-Quality, Relaxed AlₓGa₁₋ₓN for UV Microdevices"

  • ​Sho Sugiyama, Asahi Kasei - Japan - "Development of 100mm AIN Single Crystal Substrates and MOVPE-Grown Pseudomorphic AIN/GaN/AIN HEMTs on AIN substrates"

  • Fabrizio Roccaforte, IMM CNR Catania Italy - "Advances in gate stack engineering for GaN devices: from Schottky contacts to insulaing layers"